STMicroelectronics - STI35N65M5

STMicroelectronics STI35N65M5

Hersteller: STMicroelectronics

MPN: STI35N65M5

SKU: STI35N65M5

Stückpreis: 3.50 EUR

Produktbeschreibung

MOSFET N-CH 650V 27A I2PAK

Technische Daten

EigenschaftWert
Package/CaseTO-262-3
Continuous Drain Current (ID)27000 mA
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance98 mR
Drain to Source Voltage (Vdss)650 V
Fall Time16 ns
Gate to Source Voltage (Vgs)25 V
Height10.75 mm
Input Capacitance3750 pF
Lead FreeLead Free
Length10.4 mm
Max Operating Temperature150 °C
Max Power Dissipation160000 mW
MountThrough Hole
PolarityN-CHANNEL
Power Dissipation160000 mW
Radiation HardeningNo
Rds On Max98 mR
seriesMDmesh™ V B
Threshold Voltage4 V
Turn-Off Delay Time60 ns
Turn-On Delay Time60 ns
Width4.6 mm